B. Course Syllabi for Materials Engineering

1. Course Name: Mat E 431 Introduction to Microelectronics Fabrication

2. Catalog Description: Mat E 431. Introduction to Microelectronics Fabrication. (Same as E E 431). (2-4) Cr. 4. Semester: Varies. An introduction to microelectronic device fabrication with hands-on laboratory experience. Students design, fabricate and evaluate basic semiconductor materials and devices. Electronic materials processing techniques, deposition and growth, etching and photolithography, are emphasized. Materials concerns such as electron migration, contacting, film stress, barrier properties and dielectric quality are also covered. Materials fee. Nonmajor graduate credit.

3. Prerequisites: Mat E211 and 214.

4. Textbook/Materials: Introduction to microelectronic fabrication, R.C. Jaeger.

5. Course Learning Objectives:
The student will:

• Be able to demonstrate and understand and practical knowledge of technology and theory of semiconductor processes.
• Be able to show proficiency in the operation of semiconductor processing equipment to fabricate working devices.
• Be able to test and interpret data from the characteristic I-V cures of CMOS and bipolar devices.
• Be able to use thin film characterization equipment.
• Be able to carry out ultra pure materials handling procedures and clean room laboratory protocols.
• Be able to explain and implement microfabrication laboratory safety procedures.
• Be able to demonstrate knowledge of contemporary issues in electronic material fabrication.

6. Course Topics:
Part I: Basic semiconductor device physics

• Band models for basic solid state devices
• Basic electrical characteristics of the solid state diode and transistor.
• Transistor metrics; channel length and width, W/ L ratio
• Bipolar junction transistor & IV behavior
• MOS transistor & IV behavior

Part II: Semiconductor processing ( course work to complement lab work in Part III)

• Basic bipolar & MOS processing
• Photolithography and patterning
• Thermal oxidation of silicon; process, model, characterization (optical) and technology
• Diffusion of dopants in Si; process, model, characterization (.sheet resistance), junction formation and technology, Ion implantation
• Film Deposition; evaporation, sputtering, CVD, Etching; RIE & wet chemical
• Metal interconnects and contacts; metallurgy & electrical characteristics (Ohmic) Device testing; IV characteristics

Part III: Laboratory work (concurrent with Part II)

• Lab procedures and safety
• Wafer handling and preparation
• Processing and film characterization
• Electrical characterization

7. Class/Laboratory Schedule: Class MW 3:00-3:50 PM, Lab Time arranged
8. Professional Component: Mat E 431 contributes 4 credits towards Engineering Topics.

9. Relationship of Course to Program Learning Outcomes and Program Educational Objectives: Objectives: A, C, D, E Outcomes a, b, d, e, g, j-o, r (significant), f, h (moderate)

10. Prepared by: David Cann, 1/31/00, rev. 5/24/00 KPC